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Radiation Protection Dosimetry 2004 110(1-4):283-290; doi:10.1093/rpd/nch202
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Radiation Protection Dosimetry Vol. 110 Nos. 1-4 © Oxford University Press 2004; all rights reserved

Novel developments in the MOSFET dosemeter for neutron dosimetry applications

Robert A. Price1,*, Chris Benson2,{dagger}, Malcolm J. Joyce2, David J. Kestell3 and Jon Silvie4

1 Computational and Applied Dosimetry Research Group, Physics Department, Clatterbridge Centre for Oncology, Bebington, Wirral, Merseyside CH63 4JY, UK
2 Engineering Department, Lancaster University, Bailrigg, Lancaster, Lancashire LA1 4YR, UK
3 Radiation and Genomic Stability Unit, Medical Research Council, Harwell, Didcot, Oxfordshire OX11 ORD, UK
4 Instrument Development Services, SMITE, BAE SYSTEMS (Marine), Barrow-in-Furness, Cumbria LA14 1AF, UK

* Corresponding author: rprice1495{at}aol.com

The feasibility of large-geometry Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been assessed for both active and passive neutron dosimetry and use in radiotherapy environments. Neutron sensitivity has been enhanced with the use of polymeric cement surrounding the gate region. Neutron activation via nuclear interaction processes is a potential problem with conventionally packaged and fabricated devices. To overcome this problem, a unique low-activation device design is described. Standard Dual in-Line devices, modified with polymeric cement and boron loaded cement have been exposed to gamma rays (60Co) and neutrons (gamma-ray shielded 252Cf) to provide neutron sensitivity estimates. The results show that the neutron sensitivity can be increased by a factor of approximately three by the use of a thin layer of polymeric cement over the gate region. Essentially zero activation is observed in the activation-reduced design compared with 1000 cps in the conventional design MOSFET when both are exposed under identical conditions to a neutron field from a gamma-ray shielded 252Cf isotopic source.


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