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Radiation Protection Dosimetry 33:307-310 (1990)
© 1990 Oxford University Press
Dependence of the TSEE of Beta Irradiated BeO Thin Film Detectors on the Properties of Surrounding Materials
The occupation of TSEE traps in the active surface region of BeO thin film detectors does not depend mainly on the interaction of the primary ionising radiation with the detector material, but is caused by low energy electrons which are generated outside the BeO layer. Therefore the properties of the environment surrounding the detector have a strong influence on the TSEE response. In order to optimise BeO thin film dosemeters for the measurement of Hs(0.07) in beta radiation fields the influence of these properties has been studied. The detectors were covered with foils of Hostaphan and Makrofol. For 90Sr+90Y the influence of scattering from surrounding materials of different composition and geometry has been tested.