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Radiation Protection Dosimetry 33:179-182 (1990)
© 1990 Oxford University Press

MOS Structure for Emergency Gamma and Proton Dosimetry

P.G. Litovchenko, L.I. Barabash, A.B. Rosenfeld, V.I. Khivrich, O.S. Zinets, V.I. Kuts, I.A. Marusan, V.I. Petrov, G.F. Sluchenkov, G.N. Koval, V.I. Fominych, L.F. Belovodskiy, A.I. Dumik and V.Ya. Kiblik

Effect of gamma and proton irradiation on threshold voltage shift ? VT for n-channel MOSFET has been studied. For MOSFET with zero gate bias during gamma irradiation the shift ? VT is linear with dose D? (up to doses of 10 Gy) and the sensitivity ? VT/D? is approximately 120 mV.Gy-1. The sensitivity of MOSFETs with positive gate bias Vg during irradiation varies as Vg2/3 and no saturation is observed up to breakdown voltage. n-MOSFETs with bias of 100 V have the sensitivity of approximately 5 V.Gy-1. When n-MOSFETs are irradiated with 50 MeV protons the shift ? VT varies as Dp0.67 (for proton doses Dp ranged from 0.2 to 900 Gy). The positive charge storage in oxide is shown to contribute mainly to the radiation sensitivity of n-MOSFETs investigated.


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