Skip Navigation


Radiation Protection Dosimetry Advance Access originally published online on May 12, 2006
Radiation Protection Dosimetry 2006 119(1-4):62-65; doi:10.1093/rpd/nci606
This Article
Right arrow Full Text
Right arrow Full Text (PDF)
Right arrow All Versions of this Article:
119/1-4/62    most recent
nci606v1
Right arrow Alert me when this article is cited
Right arrow Alert me if a correction is posted
Services
Right arrow Email this article to a friend
Right arrow Similar articles in this journal
Right arrow Similar articles in ISI Web of Science
Right arrow Similar articles in PubMed
Right arrow Alert me to new issues of the journal
Right arrow Add to My Personal Archive
Right arrow Download to citation manager
Right arrowRequest Permissions
Google Scholar
Right arrow Articles by Kher, R. S.
Right arrow Articles by Khokhar, M. S. K.
Right arrow Search for Related Content
PubMed
Right arrow PubMed Citation
Right arrow Articles by Kher, R. S.
Right arrow Articles by Khokhar, M. S. K.
Social Bookmarking
 Add to CiteULike   Add to Connotea   Add to Del.icio.us  
What's this?

© The Author 2006. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oxfordjournals.org

Deformation luminescence produced during application and release of pressure on to gamma-irradiated CaF2:RE crystals

R. S. Kher1,*, N. Brahme1, M. Banerjee1, S. J. Dhoble2 and M. S. K. Khokhar3

1 Department of Physics, Government Science P.G. College, Bilaspur 495 006, C.G., India
2 Department of Physics, Kamla Nehru College, Sakkardara, Nagpur 440 009, M.S., India
3 Department of Rural Technology, Guru Ghasidas University, Bilaspur 495 009, C.G., India

* Corresponding author: kherrs{at}hotmail.com

Calcium fluoride CaF2 is an interesting host lattice for rare earth (RE) activators. CaF2 crystals doped with different concentrations of Dy, Ce, Er and Gd have been grown by the Bridgman technique and their deformation luminescence (DL) induced by room temperature gamma irradiation has been recorded. When a uniaxial pressure is applied on to gamma-irradiated CaF2:RE crystals, initially the DL intensity increases with time, attains a maximum value and then it decreases with time. Although the DL intensity produced during the release of pressure is less, its rise and decay behaviours are similar to that obtained during the application of pressure. The DL intensity depends on dopant, concentration of dopant, irradiation doses and mass of the load or applied pressure. It is suggested that the moving dislocation produced during deformation of crystals capture holes from hole trapped centres (like perturbed Vk centre) and the subsequent radiative recombination of the dislocation holes with electrons give rise to DL.


Add to CiteULike CiteULike   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us    What's this?




Disclaimer: Please note that abstracts for content published before 1996 were created through digital scanning and may therefore not exactly replicate the text of the original print issues. All efforts have been made to ensure accuracy, but the Publisher will not be held responsible for any remaining inaccuracies. If you require any further clarification, please contact our Customer Services Department.