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Radiation Protection Dosimetry Advance Access originally published online on June 21, 2005
Radiation Protection Dosimetry 2005 117(4):365-368; doi:10.1093/rpd/nci308
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© The Author 2005. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oxfordjournals.org

PIN silicon diode fast neutron detector

Chunzhi Zhou*, Jianxing Zhao and Wuyun Xiao

Research Institute of Chemical Defense, P.O. Box 1044-203, Beijing 102205, China

* Corresponding author: zhoucz{at}sohu.com

Received January 4, 2005, amended March 22, 2005, accepted May 16, 2005

Two batches of diodes, with different structural ratios (the ratio of area and thickness), were made using different manufacturing processes. The energy response of the first batch to 15 kinds of monoenergetic neutrons ranging from 180 keV to 17.56 MeV was tested, and the neutron source response of both batches to 239Pu–Be neutron source was measured. The energy deposition in the diodes irradiated by 1 keV to 20 MeV monoenergetic neutrons was calculated with simulation procedure. The response curve of the experimental results showed an approximately similar trend to that of theoretical computation. Based on the results of the neutron source response experiments, it was concluded that the response of fast neutron varied linearly with the structural ratio of the detectors.


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