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Radiation Protection Dosimetry 2004 111(1):77-81; doi:10.1093/rpd/nch364
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Radiation Protection Dosimetry Vol. 111, No. 1 © Oxford University Press 2004; all rights reserved

Mos dosemeter using bismuth oxide (Bi2O3) and copper phthalocyanine (CuPc) polymer thick film

A. Arshak1,*, S. Zleetni1 and K. I. Arshak2

1 Physics Department, University of Limerick, Plassey Technological Park, Limerick, Ireland
2 Department Electronics and Computer Engineering, University of Limerick, Plassey Technological Park, Limerick, Ireland

* Corresponding author: arousian.arshak{at}ul.ie

A metal-oxide-silicon (MOS)-capacitor having an Ag/Bi2O3/CuPc/Ag and an MOS-transistor with Ag (gate)-Bi2O3 (gate insulator)-CuPc (semiconductor)-CdO (drain and source) structure were fabricated using screen-printing polymer thick film. The effects of gamma irradiation on the characteristics of both MOS-capacitor and MOS-transistor were investigated. The flat band voltage (VFB) of the MOS-capacitor showed a shift towards the negative gate voltage when exposed to gamma rays. The IDS–VGS characteristics displayed enhancement mode transistor for such devices. The threshold voltage was found to be 4.25 V, which displayed a linear and gradual decrease in {Delta}VT = 0.5 V at VDS = 0 V and {Delta}VT = 1.0 V at VDS = 2 V when exposed to gamma rays of dose step of 60 Gy.


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